Study of the electrical properties of thin film transistors based on nickel phthalocyanine
Identifieur interne : 000D92 ( Main/Exploration ); précédent : 000D91; suivant : 000D93Study of the electrical properties of thin film transistors based on nickel phthalocyanine
Auteurs : R. Ben Chaabane [France] ; G. Guillaud [France] ; M. Gamoudi [France]Source :
- Thin Solid Films [ 0040-6090 ] ; 1997.
English descriptors
Abstract
Abstract: Fabrication and characterization of Schottky gated and metal semiconductor field-effect transistors based on molecular materials have been reported. In this paper, we present results on the transient properties of thin film transistors. The presence of a delay time when drain voltage is applied is studied. A discussion about the functioning principle of this class of devices is presented. Finally, the effect of both environment and different film treatments on the electrical characteristics is also investigated.
Url:
DOI: 10.1016/S0040-6090(96)09343-1
Affiliations:
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